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小尺寸自支撑GaN衬底  
·详细描述  

小尺寸自支撑氮化镓衬底
Free-standing GaN Substrates (Customized size)
 
性能参数Specifications:

产品型号Item
GaN-FS-10
GaN-FS-15
尺寸Dimensions
10.0mm×10.5mm
14.0mm×15.0mm
孔洞密度Marco Defect Density
LD Level
> 90%
厚度 Thickness
300 ± 25 µm
晶体取向Orientation
C-axis(0001) ± 0.5°
TTV(Total Thickness Variation)
15 µm
弯曲度BOW
20 µm
导电类型Conduction Type
N-type
Semi-Insulating
电阻率Resistivity(300K)
< 0.5 Ω·cm
>106 Ω·cm
位错密度Dislocation Density
Less than 5x106 cm-2
有效面积Useable Surface Area
> 90%
抛光Polishing
Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
包装Package
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

性能参数Specifications:

产品型号Item
GaN-FS-N-1.5
尺寸Dimensions
Ф 25.4mm ± 0.5mm
Ф 38.1mm ± 0.5mm
Ф 45.0mm ± 0.5mm
孔洞密度Marco Defect Density
LD Level
> 90%
LED Level
> 78%
厚度 Thickness
300 ± 25 µm
晶体取向Orientation
C-axis(0001) ± 0.5°
主定位边Orientation Flat
(1-100) ± 0.5°, 12 ± 1mm
次定位边Secondary Orientation Flat
(11-20) ± 3°, 6 ± 1mm
TTV(Total Thickness Variation)
15 µm
弯曲度BOW
20 µm
导电类型Conduction Type
N-type
Semi-Insulating
电阻率Resistivity(300K)
< 0.5 Ω·cm
>106 Ω·cm
位错密度Dislocation Density
Less than 5x106 cm-2
有效面积Useable Surface Area
> 90%
抛光Polishing
Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
包装Package
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

更新时间:2016/10/12
 
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