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2-4ӢGaAsĵ  
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Semiconducting GaAs Wafers
a)  LED Applications
Item Unit Specifications Remarks
Crystal Growth Method   VGF  
Dopant   Si Zn-doped available
Diameter inch 2", 3", 4" & 6"  
Orientation   2/6/15 off Other orientations available
OF/IF   EJ or US  
Carrier Concentration /cm3 (0.4-4)1018  
Mobility cm2/v.s 1500-3000  
Etch Pit Density(EPD) /cm2 5000  
Laser Marking   Upon request  
Thickness m 220-350 Other thickness available
TTV, Bow, Warp   10  
Surface   P/E , P/P  
Epi-Ready   Yes  
Package   Single or Cassette  
b)  LD Applications
Item Unit Specifications Remarks
Crystal Growth Method   VGF  
Dopant   Si Zn-doped available
Diameter inch 2", 3", 4" & 6"  
Orientation   2/6/15 off Other orientations available
OF/IF   EJ or US  
Carrier Concentration /cm3 (0.4-4)1018  
Mobility cm2/v.s 1500-3000  
Etch Pit Density(EPD) /cm2 5000  
Laser Marking   Upon request  
Thickness m 220-350 Other thickness available
TTV, Bow, Warp   10  
Surface   P/E , P/P  
Epi-Ready   Yes  
Package   Single or Cassette  
Semi-insulating GaAs Wafers
Microelectronics Applications
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Item Unit Specifications Remarks
Crystal Growth Method   VGF  
Dopant   Undoped  
Diameter inch
ʱ䣺2016/10/13
 
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